型号 IPI60R099CP
厂商 Infineon Technologies
描述 MOSFET N-CH 60V 31A TO-262
IPI60R099CP PDF
代理商 IPI60R099CP
产品培训模块 CoolMOS™ CP High Voltage MOSFETs Converters
标准包装 500
系列 CoolMOS™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 600V
电流 - 连续漏极(Id) @ 25° C 31A
开态Rds(最大)@ Id, Vgs @ 25° C 99 毫欧 @ 18A,10V
Id 时的 Vgs(th)(最大) 3.5V @ 1.2mA
闸电荷(Qg) @ Vgs 80nC @ 10V
输入电容 (Ciss) @ Vds 2800pF @ 100V
功率 - 最大 255W
安装类型 通孔
封装/外壳 TO-262-3,长引线,I²Pak,TO-262AA
供应商设备封装 PG-TO262-3
包装 管件
其它名称 IPI60R099CPAKSA1
IPI60R099CPXKSA1
SP000297356
同类型PDF
IPI60R099CPA Infineon Technologies MOSFET N-CH 60V 31A TO-262
IPI60R125CP Infineon Technologies MOSFET N-CH 650V 25A TO-262
IPI60R165CP Infineon Technologies MOSFET N-CH 650V 21A TO-262
IPI60R190C6 Infineon Technologies MOSFET N-CH 600V 20.2A TO262
IPI60R199CP Infineon Technologies MOSFET N-CH 600V 16A I2PAK
IPI60R250CP Infineon Technologies MOSFET N-CH 650V 12A TO-262
IPI60R280C6 Infineon Technologies MOSFET N-CH 600V 13.8A TO262
IPI60R299CP Infineon Technologies MOSFET N-CH 600V 11A I2PAK
IPI60R380C6 Infineon Technologies MOSFET N-CH 600V 10.6A TO262
IPI60R385CP Infineon Technologies MOSFET N-CH 650V 9A I2PAK
IPI60R520CP Infineon Technologies MOSFET N-CH 600V 6.8A TO-262
IPI60R600CP Infineon Technologies MOSFET N-CH 600V 6.1A TO-262
IPI65R110CFD Infineon Technologies MOSFET N-CH 650V 31.2A TO262
IPI65R190C6 Infineon Technologies MOSFET N-CH 650V 20.2A TO262
IPI65R190CFD Infineon Technologies MOSFET N-CH 650V 17.5A TO262
IPI65R280C6 Infineon Technologies MOSFET N-CH 650V 13.8A TO262
IPI65R310CFD Infineon Technologies MOSFET N-CH 650V 11.4A TO262
IPI65R380C6 Infineon Technologies MOSFET N-CH 650V 10.6A TO262
IPI65R420CFD Infineon Technologies MOSFET N-CH 650V 8.7A TO262
IPI65R600C6 Infineon Technologies MOSFET N-CH 650V 7.3A TO262